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| BPW85 Vishay Telefunken Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1 (o 3 mm) plastic package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation. The viewing angle of 25 makes it insensible to ambient straylight. Features D D D D D D D Fast response times High photo sensitivity Standard T-1 (o 3 mm ) clear plastic package Axial terminals Angle of half sensitivity = 25 Suitable for visible and near infrared radiation Selected into sensitivity groups 94 8396 Applications Detector in electronic control and drive circuits Absolute Maximum Ratings Tamb = 25_C Parameter Collector Emitter Voltage Emitter Collector Voltage Collector Current Peak Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Symbol VCEO VECO IC ICM Ptot Tj Tstg Tsd RthJA Value 70 5 50 100 100 100 -55...+100 260 450 Unit V V mA mA mW C C C K/W tp/T = 0.5, tp 10 ms Tamb 55 C x x t x 3 s, 2 mm from case Document Number 81531 Rev. 3, 16-Nov-99 www.vishay.de * FaxBack +1-408-970-5600 1 (6) BPW85 Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Collector Emitter Breakdown Voltage Collector Dark Current Collector Emitter Capacitance Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Collector Emitter Saturation Voltage Turn-On Time Turn-Off Time Cut-Off Frequency Test Conditions IC = 1 mA VCE = 20 V, E = 0 VCE = 5 V, f = 1 MHz, E = 0 Symbol V(BR)CE O Min 70 Typ Max Unit V nA pF deg nm nm V ICEO CCEO l = 950 nm, IC = 0.1 mA VS = 5 V, IC = 5 mA, RL = 100 W VS = 5 V, IC = 5 mA, RL = 100 W VS = 5 V, IC = 5 mA, RL = 100 W Ee = 1 mW/cm2, lp l0.5 ton toff fc 1 3 25 850 620...980 200 VCEsat 2.0 2.3 180 0.3 ms ms kHz Type Dedicated Characteristics Tamb = 25_C Parameter Test Conditions Collector Light Current Ee=1mW/cm2, g l=950nm, VCE=5V Type BPW85A BPW85B BPW85C Symbol Ica Ica Ica Min 0.8 1.5 3.0 Typ 1.5 2.5 5.0 Max 2.5 4.0 8.0 Unit mA mA mA Typical Characteristics (Tamb = 25_C unless otherwise specified) 125 P tot - Total Power Dissipation ( mW ) 100 I CEO - Collector Dark Current ( nA ) 104 103 VCE=20V 102 75 RthJA 50 25 0 0 20 40 60 80 100 101 100 20 94 8304 40 60 80 100 94 8308 Tamb - Ambient Temperature ( C ) Tamb - Ambient Temperature ( C ) Figure 1. Total Power Dissipation vs. Ambient Temperature Figure 2. Collector Dark Current vs. Ambient Temperature www.vishay.de * FaxBack +1-408-970-5600 2 (6) Document Number 81531 Rev. 3, 16-Nov-99 BPW85 Vishay Telefunken 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 94 8239 10 Ica - Collector Light Current ( mA ) BPW 85 B Ee=1 mW/cm2 0.5 mW/cm2 1 0.2 mW/cm2 0.1 mW/cm2 0.05 mW/cm2 0.1 l=950nm I ca rel - Relative Collector Current VCE=5V Ee=1mW/cm2 l=950nm 0.01 20 40 60 80 100 94 8276 0.1 1 10 100 Tamb - Ambient Temperature ( C ) VCE - Collector Emitter Voltage ( V ) Figure 3. Relative Collector Current vs. Ambient Temperature 10 Ica - Collector Light Current ( mA ) Ica - Collector Light Current ( mA ) BPW85B 1 BPW85C 10 Figure 6. Collector Light Current vs. Collector Emitter Voltage Ee=1 mW/cm2 0.5 mW/cm2 1 0.2 mW/cm2 0.1 mW/cm2 0.05 mW/cm2 0.1 BPW85A 0.1 0.01 0.01 94 8271 VCE=5V l=950nm 0.1 Ee - Irradiance ( 1 mW / cm2 ) 10 0.01 0.1 94 8277 BPW 85 C l=950nm 1 10 100 VCE - Collector Emitter Voltage ( V ) Figure 4. Collector Light Current vs. Irradiance C CEO - Collector Emitter Capacitance ( pF ) Figure 7. Collector Light Current vs. Collector Emitter Voltage 10 8 f=1MHz 10 Ica - Collector Light Current ( mA ) BPW 85 A l=950nm 1 Ee=1 mW/cm2 0.5 mW/cm2 0.2 mW/cm2 0.1 mW/cm2 0.1 0.05 mW/cm2 6 4 2 0 0.1 1 10 100 VCE - Collector Emitter Voltage ( V ) 0.01 0.1 94 8275 1 10 100 94 8294 VCE - Collector Emitter Voltage ( V ) Figure 5. Collector Light Current vs. Collector Emitter Voltage Figure 8. Collector Emitter Capacitance vs. Collector Emitter Voltage Document Number 81531 Rev. 3, 16-Nov-99 www.vishay.de * FaxBack +1-408-970-5600 3 (6) BPW85 Vishay Telefunken t on / t off - Turn on / Turn off Time ( m s ) 8 S rel - Relative Sensitivity VCE=5V RL=100W 0 10 20 30 6 l=950nm 40 1.0 0.9 0.8 0.7 50 60 70 80 4 toff ton 0 0 2 4 6 8 10 12 14 2 0.6 94 8295 0.4 0.2 0 0.2 0.4 0.6 94 8293 IC - Collector Current ( mA ) Figure 9. Turn On/Turn Off Time vs. Collector Current Figure 11. Relative Radiant Sensitivity vs. Angular Displacement S ( l ) rel - Relative Spectral Sensitivity 1.0 0.8 0.6 0.4 0.2 0 400 600 94 8348 l - Wavelength ( nm ) 800 1000 Figure 10. Relative Spectral Sensitivity vs. Wavelength www.vishay.de * FaxBack +1-408-970-5600 4 (6) Document Number 81531 Rev. 3, 16-Nov-99 BPW85 Vishay Telefunken Dimensions in mm 96 12190 Document Number 81531 Rev. 3, 16-Nov-99 www.vishay.de * FaxBack +1-408-970-5600 5 (6) BPW85 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de * FaxBack +1-408-970-5600 6 (6) Document Number 81531 Rev. 3, 16-Nov-99 |
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